Performance Comparison of SONOS-Type UV TD Sensor Using Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon Oxide-Silicon and Indium Tin Oxide-Aluminum Oxide-Hafnium Aluminum Oxide-Silicon Oxide-Silicon

This study compares the performance of two types capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon (IAZAOS) and oxide-hafnium (IAHAOS), as silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory (NVM) total dose ultraviolet radiation (UV TD) sensors. Results show that IAZAOS with zirconia oxide charge-trapping layer outperforms IAHAOS hafnium for a UV TD sensor. After exposure to irradiation 100 mW·s/cm2, threshold voltage (VT) change is almost 1.25 times IAHAOS. The also found annealing can significantly improve response Furthermore, devices partially smaller nanocrystals in greatly enhance SONOS-type compared constant stress-induced leakage current (CVSILC) CVSILC annealed 1000 than devices. Moreover, IAZAOS-I2Z2 exhibits superior regarding irradiation/refresh cycle endurance IAHAOS-I2H1 device. These findings suggest have potential use